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| 7MBP25RA120 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series packages * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 25A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current Symbol VDC VDC(surge) VSC VCES VR IC ICP -IC PC IC ICP IF PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 1200 25 50 25 198 15 30 15 120 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V V A A A W A A A W C V V mA V mA C C kV N*m N*m Unit DC 1ms DC One transistor DB Collector power dissipation Collector current DC 1ms Forward current of Diode Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Symbol Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Condition Min. Typ. Max. VCE=1200V input terminal open ICES Ic=25A VCE(sat) -Ic=25A VF VCE=1200V input terminal open ICES Ic=15A VCE(sat) -Ic=15A VF Unit - - - - - - - - - - - - 1.0 2.6 3.0 1.0 2.6 3.0 mA V V mA V V DB 7MBP25RA120 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM IGBT-IPM Symbol Condition Min. Typ. Max. Iccp 3 18 fsw=0 to 15kHz Tc=-20 to 100C *7 ICCN 10 65 fsw=0 to 15kHz Tc=-20 to 100C *7 Vin(th) 1.00 1.35 1.70 ON 1.25 1.60 1.95 OFF VZ 8.0 Rin=20k ohm TCOH 125 VDC=0V, Ic=0A, Case temperature Fig.1 110 TCH 20 TjOH 150 surface of IGBT chips TjH 20 IOC 38 Tj=125C IOC 23 Tj=125C tDOC 10 Tj=25C Fig.2 VUV 11.0 12.5 VH 0.2 tALM 1.5 2 tSC 12 Tj=25C Fig.3 RALM 1425 1500 1575 Unit mA mA V V V C C C C A A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=25A, VDC=600V IF=25A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics(Tc=25C) Item Junction to Case thermal resistance INV DB Case to fin thermal resistance with compound IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.63 1.33 1.04 Unit C/W C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 7MBP25RA120 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g 7MBP25RA120 Characteristics (Representative) Control Circuit IGBT-IPM Power supply current vs. Switching frequency Tj=100C 30 Input signal threshold voltage vs. Power supply voltage 2.5 Tj=25C Tj=125C Power supply current : Icc (mA) 25 Vcc=15V Vcc=13V Input signal threshold voltage : Vin(on),Vin(off) (V) P-side N-side Vcc=17V 2 } Vin(off) 1.5 } Vin(on) 20 15 1 10 Vcc=17V Vcc=15V 5 Vcc=13V 0.5 0 0 5 10 15 20 25 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 Switching frequency : fsw (kHz) Under voltage vs. Junction temperature 14 12 Under voltage hysterisis vs. Jnction temperature 1 Under voltage hysterisis : VH (V) 0.8 Under voltage : VUVT (V) 10 8 6 4 2 0 0.6 0.4 0.2 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Junction temperature : Tj (C) Junction temperature : Tj (C) Alarm hold time vs. Power supply voltage Over heating protection : TcOH,TjOH (C) OH hysterisis : TcH,TjH (C) 3 200 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc TjOH 150 TcOH 100 Alarm hold time : tALM (mSec) 2.5 Tj=125C 2 Tj=25C 1.5 1 50 TcH,TjH 0.5 0 12 0 13 14 15 16 17 18 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) Power supply voltage : Vcc (V) 7MBP25RA120 Inverter IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 40 Vcc=17V 35 35 Vcc=15V Collector current vs. Collector-Emitter voltage Tj=125C 40 Vcc=17V Vcc=15V Collector Current : Ic (A) 30 25 20 15 10 5 0 Collector Current : Ic (A) Vcc=13V 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 Vcc=13V 0 0.5 1 1.5 2 2.5 3 3 Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V) Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=25C 10000 10000 Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=125C Switching time : ton,toff,tf (nSec) Switching time : ton,toff,tf (nSec) toff ton 1000 tf toff 1000 ton 100 tf 100 10 0 5 10 15 20 25 30 35 40 10 0 5 10 15 20 25 30 35 40 Collector current : Ic (A) Collector current : Ic (A) Forward current vs. Forward voltage 40 35 125C Reverse recovery characteristics trr,Irr vs. IF 1000 25C Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) trr125C trr25C 100 Forward Current : If (A) 30 25 20 15 10 5 0 Irr125C 10 Irr25C 0 0.5 1 1.5 2 2.5 3 1 0 5 10 15 20 25 30 35 40 Forward voltage : Vf (V) Forward current : IF(A) 7MBP25RA120 IGBT-IPM Transient thermal resistance 10 Reversed biased safe operating area Vcc=15V,Tj 125C 350 300 Thermal resistance : Rth(j-c) (C/W) Collector current : Ic (A) FWD 1 IGBT 250 200 150 100 50 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) 0.1 0.01 0.001 0 0.01 0.1 1 0 200 400 600 800 1000 1200 1400 Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 250 Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 100 Power derating for FWD (per device) 200 80 150 60 100 40 50 20 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=25C Switching loss : Eon,Eoff,Err (mJ/cycle) 12 Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=125C 12 Switching loss : Eon,Eoff,Err (mJ/cycle) 10 10 Eon 8 Eon 6 8 6 Eoff 4 4 Eoff 2 Err 0 0 5 10 15 20 25 30 35 40 2 Err 0 0 5 10 15 20 25 30 35 40 Collector current : Ic (A) Collector current : Ic (A) 7MBP25RA120 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V 100 Over current protection level : Ioc(A) 80 60 40 20 0 0 20 40 60 80 100 120 Junction temperature : Tj(C) 140 7MBP25RA120 Brake IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 25 Vcc=15V Vcc=17V Collector Current : Ic (A) Vcc=13V 25 Collector current vs. Collector-Emitter voltage Tj=125C Vcc=15V Vcc=17V 20 Vcc=13V Collector Current : Ic (A) 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 Collector-Emitter voltage : Vce (V) 3 0 0 0.5 1 1.5 2 2.5 Collector-Emitter voltage : Vce (V) 3 T ra ns ien t th erm a l res is tan c e Th e rm a l re s is ta n c e : R th (j-c ) (C /W ) 10 210 180 IG B T Reversed biased safe operating area Vcc=15V,Tj< 125C = Collector current : Ic (A) 150 120 SCSOA (non-repetitive pulse) 1 90 60 30 0 0 .1 RBSOA (Repetitive pulse) 0 .0 1 0 .0 0 1 0 .0 1 0 .1 1 P u ls e w id th :P w (s e c) 0 200 400 600 800 1000 1200 Collector-Emitter voltage : Vce (V) 1400 Power derating for IGBT (per device) 140 Over current protection level : Ioc(A) 0 20 40 60 80 100 120 140 160 Collecter Pow er Dissipation : Pc (W) 120 100 80 60 40 20 0 Case Temperature : Tc (C) 80 70 60 50 40 30 20 10 Over current protection vs. Junction temperature Vcc=15V 0 0 20 40 60 80 100 Junction temperature : Tj(C) 120 140 |
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